Samsung Semiconductor - K4B4G1646D-BYMA

KEY Part #: K7359697

[19892pcs ស្តុក]

លេខផ្នែក:: K4B4G1646D-BYMA

ក្រុមហ៊ុនផលិត:: Samsung Semiconductor

ការពិពណ៌នាលំអិត:: 4 Gb 256M x 16 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.

Manufacturer's standard lead time:: នៅក្នុងស្តុក

ជីវិតធ្នើ:: មួយឆ្នាំ

ជីបពី:: ហុងកុង

RoHS:

វិធីសាស្រ្តទូទាត់:

មធ្យោបាយដឹកជញ្ជូន:

ក្រុមគ្រួសារ:: ខេធីសមាសធាតុសមាសភាគខូអិលធីឌីគឺជាអ្នកចែកចាយគ្រឿងអេឡិចត្រូនិចដែលផ្តល់ជូននូវប្រភេទផលិតផលរួមមាន៖ ស៊ី ១ ។

គុណសម្បត្តិនៃការប្រកួតប្រជែង:: We specialize in Samsung Semiconductor K4B4G1646D-BYMA electronic components. K4B4G1646D-BYMA can be shipped within 24 hours after order. If you have any demands for K4B4G1646D-BYMA, Please submit a Request for Quotation here or send us an email: rfq@key-components.com

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

K4B4G1646D-BYMA គុណលក្ខណៈផលិតផល

លេខផ្នែក : K4B4G1646D-BYMA

ក្រុមហ៊ុនផលិត : Samsung Semiconductor

ការពិពណ៌នា : 4 Gb 256M x 16 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production

ស៊េរី : DDR3

ដង់ស៊ីតេ : 4 Gb

org ។ : 256M x 16

ល្បឿន : 1866 Mbps

វ៉ុល : 1.35 V

បណ្ដោះអាសន្ន។ : 0 ~ 85 °C

កញ្ចប់ : 96FBGA

ស្ថានភាពផលិតផល : Mass Production

ព័ត៌មានថ្មីៗ

Samsung Launches Industry’s First 12Gb LPDDR4 DRAM

Samsung Enhances Functional Safety to its Automotive Semiconductors with ISO 26262 Certification

Inside the building blocks of the 5G future

Samsung Now Producing Industry’s Highest Density (3GB) LPDDR3 Mobile Memory for Smartphones

5G and Memory - from Connected Thinking to Connected Living

[Video] 5G memory solutions : 5G. All in the Memory.

Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM

Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology

Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology

Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day

Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI

Mass Production of Fifth-Generation V-NAND has Started

អ្នកក៏អាចចាប់អារម្មណ៍ផងដែរ

M378A1K43BB1-CPB

Samsung Semiconductor

DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.
M378A1K43BB2-CRC

Samsung Semiconductor

DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.
M378A1K43BB2-CTD

Samsung Semiconductor

DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.
M378A1K43CB2-CPB

Samsung Semiconductor

DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.
M378A1K43CB2-CRC

Samsung Semiconductor

DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.
M378A1K43CB2-CTD

Samsung Semiconductor

DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

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